參數(shù)資料
型號(hào): KM416RD4C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM)
中文描述: 直接Rambus公司的DRAM(動(dòng)態(tài)內(nèi)存直接Rambus公司)
文件頁數(shù): 59/59頁
文件大?。?/td> 4654K
代理商: KM416RD4C
Page 60
KM416RD4C/KM418RD4C
Direct RDRAM
Revision 0.7 September 1998
TARGET
Center-Bonded uBGA Package
Figure Figure shows the form and dimensions of the recom-
mended package for the center-bonded CSP device class.
Figure 61 : Center-Bonded uBGA Package
Table Table lists the numerical values corresponding to
dimensions shown in Figure Figure.
Table 28 : Center-Bonded uBGA Package Dimensions
A
B
C
D
E
F
G
H
J
1
2
3
4
5
6
7
D
A
e1
d
E
E1
8
e2
Top
Bottom
Symbol
Parameter
Min
Max
Unit
e1
Ball pitch (x-axis)
1.00
1.00
mm
e2
Ball pitch (y-axis)
0.8
0.8
mm
A
Package body length
note
a
note
a
-
D
Package body width
note
a
note
a
-
E
Package total thickness
0.65
1.20
mm
E1
Ball height
0.20
0.43
mm
d
Ball diameter
0.33
0.50
mm
a.Package length and width vary with die size for chip scale packages.
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