- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374354 > KM416RD4C (SAMSUNG SEMICONDUCTOR CO. LTD.) Direct Rambus DRAM(Direct Rambus 動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM416RD4C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Direct Rambus DRAM(Direct Rambus 動態(tài)RAM) |
| 中文描述： | 直接Rambus公司的DRAM（動態(tài)內(nèi)存直接Rambus公司） |
| 文件頁數(shù)： | 47/59頁 |
| 文件大小： | 4654K |
| 代理商： | KM416RD4C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁當(dāng)前第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁
Page 48
KM416RD4C/KM418RD4C
Direct RDRAM
Revision 0.7 September 1998
TARGET
RSL - Clocking
Figure Figure is a timing diagram which shows the detailed
requirements for the RSL clock signals on the Channel.
The CTM and CTMN are differential clock inputs used for
transmitting information on the DQA and DQB, outputs.
Most timing is measured relative to the points where they
cross. The t
CYCLE
parameter is measured from the falling
CTM edge to the falling CTM edge. The t
CL
and t
CH
param-
eters are measured from falling to rising and rising to falling
edges of CTM. The t
CR
and t
CF
rise- and fall-time parame-
ters are measured at the 20% and 80% points.
The CFM and CFMN are differential clock outputs used for
receiving information on the DQA, DQB, ROW and COL
outputs. Most timing is measured relative to the points
where they cross. The t
CYCLE
parameter is measured from
the falling CFM edge to the falling CFM edge. The t
CL
and
t
CH
parameters are measured from falling to rising and rising
to falling edges of CFM. The t
CR
and t
CF
rise- and fall-time
parameters are measured at the 20% and 80% points.
The t
TR
parameter specifies the phase difference that may be
tolerated with respect to the CTM and CFM differential
clock inputs (the CTM pair is always earlier).
Figure 52 : RSL Timing - Clock Signals
V
CIH
50%
V
CIL
80%
20%
CTM
CTMN
V
CIH
50%
V
CIL
80%
20%
CFM
CFMN
t
TR
t
CF
t
CF
t
CR
t
CR
t
CYCLE
t
CL
t
CH
t
CF
t
CF
t
CR
t
CR
t
CYCLE
t
CL
t
CH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S1021CT-G7 | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1021CT-G8 | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1021CT-GS | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1120D | 512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S16230A | 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416RD4D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD8AC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD8AC(D)-RK70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD8AC(D)-RK80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD8AC(DB)-RCG60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。