參數(shù)資料
型號(hào): KM416RD4C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM)
中文描述: 直接Rambus公司的DRAM(動(dòng)態(tài)內(nèi)存直接Rambus公司)
文件頁(yè)數(shù): 37/59頁(yè)
文件大?。?/td> 4654K
代理商: KM416RD4C
Page 38
KM416RD4C/KM418RD4C
Direct RDRAM
Revision 0.7 September 1998
TARGET
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write register.
Reset value is undefined
TCYCLE13..0 - Specifies the value of the t
CYCLE
datasheet parameter in 64ps units. For the t
CYCLE,MIN
of 2.5ns (2500ps), this field should be written with the
value “00027
16
” (3964ps).
Control Register: TCYCLE
Address: 04c
16
0
0
TCYCLE13..TCYCLE0
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write registers.
Reset value of TEST75,78,79 is zero ( SIO Reset).
Do not read or write TEST75,78,79 after SIO reset.
TEST77 must be written with zero after SIO reset.
These registers must only be used for testing purposes.
Control Register: TEST75
Address: 04b
16
Address: 04d
16
Address: 04e
16
Address: 04f
16
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Control Register: TEST77
Control Register: TEST78
Control Register: TEST79
Figure 42 : TCYCLE Register
Figure 43 : TEST Register
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